The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Jan. 17, 2019
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Alan Kalitsov, San Jose, CA (US);

Derek Stewart, Livermore, CA (US);

Gerardo Bertero, Redwood City, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); G11C 11/16 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G01R 33/093 (2013.01); G01R 33/096 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/56 (2013.01);
Abstract

A magnetoresistive memory device includes a magnetic-exchange-coupled layer stack containing a free layer, a reference layer and an electrically conductive, non-magnetic interlayer exchange coupling layer located between the free layer and the reference layer, and an insulating spacer layer located in a series connection with the magnetic-exchange-coupled layer stack between a first electrode and a second electrode. The first electrode and the second electrode are configured to provide a programming voltage across the magnetic-exchange-coupled layer stack and the insulating spacer layer.


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