The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Dec. 19, 2018
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Ning Zhu, Chandler, AZ (US);
Jeffrey Spencer Roberts, Tempe, AZ (US);
Damon G. Holmes, Scottsdale, AZ (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/56 (2006.01); H03F 3/217 (2006.01); H03F 3/193 (2006.01); H01L 29/20 (2006.01); H01L 23/66 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H03F 1/565 (2013.01); H01L 21/4825 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 23/66 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H03F 3/193 (2013.01); H03F 3/2171 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6666 (2013.01); H01L 2223/6672 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/49052 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19105 (2013.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract
The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.