The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Mar. 28, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chu Fu Chen, Zhubei, TW;
Chi-Feng Huang, Zhubei, TW;
Chia-Chung Chen, Keelung, TW;
Chin-Lung Chen, Zhubei, TW;
Victor Chiang Liang, Hsinchu, TW;
Chia-Cheng Pao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A transistor includes a gate structure over a substrate, wherein the substrate includes a channel region under the gate structure. The transistor further includes a source in the substrate adjacent a first side of the gate structure. The transistor further includes a drain in the substrate adjacent a second side of the gate structure, wherein the second side of the gate structure is opposite the first side of the gate structure. The transistor further includes a first lightly doped drain (LDD) region adjacent the source. The transistor further includes a second LDD region adjacent the drain. The transistor further includes a doping extension region adjacent the first LDD region.