The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Feb. 01, 2019
International Business Machines Corporation, Armonk, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Zuoguang Liu, Schenectady, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Chun-Chen Yeh, Clifton Park, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a fin field effect transistor (finFET), including forming a temporary gate structure having a sacrificial gate layer and a dummy gate layer on the sacrificial gate layer, forming a gate spacer layer on each sidewall of the temporary gate structure, forming a source/drain spacer layer on the outward-facing sidewall of each gate spacer layer, removing the dummy gate layer to expose the sacrificial gate layer, removing the sacrificial gate layer to form a plurality of recessed cavities, and forming a gate structure, where the gate structure occupies at least a portion of the plurality of recessed cavities.