The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Apr. 23, 2019
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Tzu Yin Chiu, Shanghai, CN;
Chong Wang, Shanghai, CN;
Haifang Zhang, Shanghai, CN;
Xuanjie Liu, Shanghai, CN;
Abstract
The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The image sensor includes: a semiconductor substrate; a first active region located on the semiconductor substrate; a doped semiconductor layer located on the first active region; and a contact located on the semiconductor layer, where the first active region includes: a first doped region and a second doped region abutting against the first doped region, wherein the second doped region is located at an upper surface of the first active region, and wherein the second doped region is formed by dopants in the semiconductor layer that are annealed to be diffused to a surface layer of the first doped region. The present disclosure may reduce leakage current and improve device performances.