The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Apr. 23, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jiehui Shu, Clifton Park, NY (US);

Xiaoqiang Zhang, Rexford, NY (US);

Haizhou Yin, Clifton Park, NY (US);

Moosung M. Chae, Englewood Cliffs, NJ (US);

Jinping Liu, Ballston Lake, NY (US);

Hui Zang, Guilderland, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/76877 (2013.01); H01L 23/5256 (2013.01);
Abstract

Interconnect structures and methods of fabricating an interconnect structure. A first interconnect and a second interconnect extend in a first direction in a interlayer dielectric layer and are spaced apart from each other. A third interconnect is arranged in the interlayer dielectric layer to connect the first interconnect with the second interconnect. The first interconnect and the second interconnect have a first width, and the third interconnect has a second width that is less than the first width.


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