The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Jan. 31, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Soojung Rho, Gyeonggi-do, KR;

Chisung Oh, Suwon-si, KR;

Kyomin Sohn, Yongin-si, KR;

Yong-Ki Kim, Suwon-si, KR;

Jong-Ho Moon, Hwaseong-si, KR;

SeungHan Woo, Seoul, KR;

Jaeyoun Youn, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H01L 23/5386 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06544 (2013.01);
Abstract

A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.


Find Patent Forward Citations

Loading…