The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Apr. 25, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, CN;

Inventors:

Ching-Chung Su, Tainan, TW;

Jiech-Fun Lu, Tainan County, TW;

Jian Wu, Shanghai, CN;

Che-Hsiang Hsueh, Tainan, TW;

Ming-Chi Wu, Kaohsiung, TW;

Chi-Yuan Wen, Tainan, TW;

Chun-Chieh Fang, Hsinchu, TW;

Yu-Lung Yeh, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/764 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 21/3083 (2013.01); H01L 21/76232 (2013.01);
Abstract

A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.


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