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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784140 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

Oct. 25, 2019

Electronic device comprising a die comprising a high electron mobility transistor

Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Ali Salih, Mesa, AZ (US);

Gordon M. Grivna, Mesa, AZ (US);

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);

Attorney:

Abel Schillinger, LLP

Primary Examiner:

Long K Tran

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/683 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 27/085 (2006.01); H01L 21/8258 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/304 (2013.01); H01L 21/306 (2013.01); H01L 21/561 (2013.01); H01L 21/6836 (2013.01); H01L 21/8258 (2013.01); H01L 23/3178 (2013.01); H01L 23/3192 (2013.01); H01L 24/95 (2013.01); H01L 27/0694 (2013.01); H01L 27/085 (2013.01); H01L 29/404 (2013.01); H01L 29/7786 (2013.01); H01L 29/7816 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01);
Abstract

An electronic device can include a semiconductor material and a semiconductor layer overlying the semiconductor material, wherein the semiconductor layer has a greater bandgap energy as compared to the semiconductor material. The electronic device can include a component having a high electrical field region and a low electrical field region. Within the high electrical field region, the semiconductor material is not present. In another embodiment, the component may not be present. In another aspect, a process can include providing a substrate and a semiconductor layer overlying the substrate; removing a first portion of the substrate to define a first trench; forming a first insulating layer within the first trench; removing a second portion of the substrate adjacent to first insulating layer to define second trench; and forming a second insulating layer within the second trench.

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