The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Oct. 31, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/76 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/67288 (2013.01); H01L 21/76 (2013.01); H01L 21/76224 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 22/24 (2013.01); H01L 21/30608 (2013.01); H01L 21/31111 (2013.01);
Abstract
Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.