The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Oct. 20, 2017
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Guillaume Claveau, Grenoble, FR;

Maxime Argoud, La Chapelle de la Tour, FR;

Nicolas Posseme, Sassenage, FR;

Raluca Tiron, Saint-Martin-le-Vinoux, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); G03F 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); B81C 1/00 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); B81C 1/00031 (2013.01); B81C 1/00388 (2013.01); G03F 7/0002 (2013.01); H01L 21/0271 (2013.01); H01L 21/02118 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0149 (2013.01);
Abstract

A method for forming a functionalised assembly guide intended for the self-assembly of a block copolymer by graphoepitaxy, includes forming on the surface of a substrate a neutralisation layer made of a first material having a first neutral chemical affinity with regard to the block copolymer; forming on the neutralisation layer a first mask including at least one recess; depositing on the neutralisation layer a second material having a second preferential chemical affinity for one of the copolymer blocks, in such a way as to fill the at least one recess of the first mask; and selectively etching the first mask relative to the first and second materials, thereby forming at least one guide pattern made of the second material arranged on the neutralisation layer.


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