The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
May. 28, 2019
Intel Corporation, Santa Clara, CA (US);
Kalyan Kavalipurapu, Santa Clara, CA (US);
Michele Piccardi, Santa Clara, CA (US);
Jaekwan Park, Cupertino, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory device includes a conductive line coupled to access addressable storage locations of the memory device. The memory device includes a circuit with a line driver with an access device for the conductive line. A control circuit sets a gate of the access device to an initial overdrive bias voltage to drive a drain of the access device to an initial voltage while the access device control circuit is not connected to the conductive line via another conductive line. The control circuit floats the gate voltage of the access device and connects the control circuit to the conductive line via the other conductive line. The floating initial overdrive voltage does not drop when the initial voltage of the control circuit drops to a final voltage under load conditions. The overdrive can result in a steeper program slope, and a controllable program pulse width or programming time (t).