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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10780679 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

Mar. 29, 2018

Laminate, method for manufacturing laminate, semiconductor device, and method for manufacturing the semiconductor device

Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Yu Iwai, Haibara-gun, JP;

Takeshi Kawabata, Haibara-gun, JP;

Akinori Shibuya, Haibara-gun, JP;

Assignee:

FUJIFILM Corporation, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

John D Freeman

Int. Cl.
CPC ...
B32B 27/28 (2006.01); H01L 23/14 (2006.01); G03F 7/027 (2006.01); G03F 7/40 (2006.01); B32B 15/08 (2006.01); B32B 15/20 (2006.01); B32B 27/16 (2006.01); H01L 23/12 (2006.01); B32B 3/30 (2006.01); G03F 7/038 (2006.01); G03F 7/32 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
B32B 27/281 (2013.01); B32B 3/30 (2013.01); B32B 15/08 (2013.01); B32B 15/20 (2013.01); B32B 27/16 (2013.01); G03F 7/027 (2013.01); G03F 7/0387 (2013.01); G03F 7/40 (2013.01); H01L 23/12 (2013.01); H01L 23/14 (2013.01); B32B 2250/44 (2013.01); B32B 2307/206 (2013.01); B32B 2307/54 (2013.01); B32B 2379/08 (2013.01); B32B 2457/08 (2013.01); B32B 2457/14 (2013.01); G03F 7/32 (2013.01); H01L 23/49822 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01);
Abstract

Provided is a laminate that excels in adhesion among a plurality of resin layers formed as insulating layers containing polyimide and so forth, a method for manufacturing the laminate, a semiconductor device, and, a method for manufacturing the semiconductor device. The laminate comprises a substrate, and at least two resin layers, each of the resin layers is independently brought into contact, in at least a part of the surface thereof, with other resin layer, and the layers independently has a Young's modulus exceeding 2.8 GPa and not exceeding 5.0 GPa, and, an elongation after fracture exceeding 50% and not exceeding 200%, and further has a three-dimensional radical crosslinked structure, and at least one of the resin layers contains at least either polyimide or polybenzoxazole.

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