The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Aug. 11, 2017
Spin Memory, Inc., Fremont, CA (US);
Mustafa Michael Pinarbasi, Morgan Hill, CA (US);
Jacob Anthony Hernandez, Morgan Hill, CA (US);
Arindom Datta, Syosset, NY (US);
Marcin Jan Gajek, Berkeley, CA (US);
Parshuram Balkrishna Zantye, Morganville, NY (US);
Spin Memory, Inc., Fremont, CA (US);
Abstract
Described embodiments can be used in semiconductor manufacturing and employ materials with high and low polish rates to help determine a precise polish end point that is consistent throughout a wafer and that can cease polishing prior to damaging semiconductor elements. The height of the low polish rate material between the semiconductor elements is used as the polishing endpoint. Because the low polish rate material slows down the polishing process, it is easy to determine an end point and avoid damage to the semiconductor elements. An additional or alternative etch end point can be a thin layer of material that provides a very clear spectroscopy signal when it has been exposed, allowing the etch process to cease.