The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Aug. 28, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Lina Kadura, Grenoble, FR;
Laurent Grenouillet, Claix, FR;
Olivier Rozeau, Moirans, FR;
Alexei Tchelnokov, Meylan, FR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H01L 27/12 (2006.01); H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/0288 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1136 (2013.01); H01L 27/1207 (2013.01); H01L 27/14616 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 31/035281 (2013.01); H01L 31/1804 (2013.01); H01L 31/0288 (2013.01);
Abstract
A photosensitive transistor device, on a semiconductor on insulator substrate, the photosensitive zone being formed in a substrate support layer and being arranged so that the concentration of photogenerated charges in the photosensitive zone can be increased towards a given zone facing the channel zone of the transistor.