The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Aug. 21, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Vibhor Jain, Essex Junction, VT (US);

John J. Pekarik, Underhill, VT (US);

Qizhi Liu, Lexington, MA (US);

Pernell Dongmo, Essex Junction, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/732 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01);
Abstract

Device structures and fabrication methods for a bipolar junction transistor. A trench isolation region surrounds an active region that includes a collector. A base layer is arranged over the active region, and a semiconductor layer is arranged on the base layer. The semiconductor layer includes a stepped profile with a first section having a first width adjacent to the base layer and a second section having a second width that is less than the first width. An emitter is arranged on the second section of the semiconductor layer.


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