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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10777663 B1

PDFFull Text
Date of Patent:
Sep. 15, 2020

Filed:

Oct. 02, 2018

Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same

Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Chung-En Tsai, Hsinchu County, TW;

Fang-Liang Lu, New Taipei, TW;

Pin-Shiang Chen, Taipei, TW;

Chee-Wee Liu, Taipei, TW;

Assignees:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

NATIONAL TAIWAN UNIVERSITY, Taipei, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Lex H Malsawma

Assistant Examiner:

Xia L Cross

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/167 (2006.01); H01L 21/223 (2006.01); H01L 21/3065 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/223 (2013.01); H01L 21/3065 (2013.01); H01L 29/167 (2013.01); H01L 29/456 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02452 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/31053 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01);
Abstract

A method includes forming a fin structure over a substrate; forming a source/drain structure adjoining the fin structure, in which the source/drain structure includes tin; and exposing the source/drain structure to a boron-containing gas to diffuse boron into the source/drain structure to form a doped region in the source/drain structure.

Find Patent Forward Citations

Tsai, Chung-En. (2020). Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same (U.S. Patent No. 10777663). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10777663

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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