The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Oct. 02, 2018
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Chung-En Tsai, Hsinchu County, TW;
Fang-Liang Lu, New Taipei, TW;
Pin-Shiang Chen, Taipei, TW;
Chee-Wee Liu, Taipei, TW;
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/167 (2006.01); H01L 21/223 (2006.01); H01L 21/3065 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/223 (2013.01); H01L 21/3065 (2013.01); H01L 29/167 (2013.01); H01L 29/456 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02452 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/31053 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01);
Abstract
A method includes forming a fin structure over a substrate; forming a source/drain structure adjoining the fin structure, in which the source/drain structure includes tin; and exposing the source/drain structure to a boron-containing gas to diffuse boron into the source/drain structure to form a doped region in the source/drain structure.