The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Mar. 26, 2019
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Hung-Kwei Liao, Taoyuan, TW;
Chen-Chiang Liu, Hsinchu County, TW;
Kuo-Sheng Shih, Hsinchu, TW;
Yung-Yao Shih, Hsinchu, TW;
Ming-Tsung Hsu, Chiayi County, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A manufacturing method of a semiconductor device includes forming a plurality of flash memory structures on a semiconductor substrate, wherein each of the flash memory structures includes a floating gate formed on the semiconductor substrate and a control gate formed on the floating gate; forming at least one pseudo contact between the plurality of flash memory structures; forming a liner film conformally on a surface of the pseudo contact; forming an interlayer dielectric layer on the whole semiconductor substrate to cover the pseudo contact and form at least one air gap between the pseudo contact and the flash memory structure; planarizing the interlayer dielectric layer until the top of the pseudo contact is exposed; removing the pseudo contact to form a contact opening; and forming a conductive material in the contact opening.