The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Nov. 27, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yushi Hu, Boise, ID (US);

John Mark Meldrim, Boise, ID (US);

Eric Blomiley, Boise, ID (US);

Everett Allen McTeer, Eagle, ID (US);

Matthew J. King, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4933 (2013.01); H01L 21/28061 (2013.01); H01L 21/28097 (2013.01); H01L 29/4975 (2013.01); H01L 29/0649 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01);
Abstract

Some embodiments disclose a gate stack having a gate (e.g., polysilicon (poly) material) horizontally between shallow trench isolations (STIs), a tungsten silicide (WSix) material over the gate and the STIs, and a tungsten silicon nitride (WSiN) material on a top surface of the WSix material. Some embodiments disclose a gate stack having a gate between STIs, a first WSix material over the gate and the STIs, a WSiN interlayer material on a top surface of the first WSix material, and a second WSix material on a top surface of the WSiN interlayer material. Additional embodiments are disclosed.


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