The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Jul. 04, 2016
Applicants:

Konkuk University Industrial Cooperation Corp, Seoul, KR;

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Hyun Jong Chung, Gyeonggi-do, KR;

Hyun Cheol Kim, Seoul, KR;

Han Byeol Lee, Gyeonggi-do, KR;

Hak Seong Kim, Seoul, KR;

Sung Yool Choi, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0684 (2013.01); H01L 29/66969 (2013.01); H01L 29/872 (2013.01); H01L 29/24 (2013.01);
Abstract

Disclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode.


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