The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Feb. 14, 2019
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chih-Ching Lin, Taoyuan, TW;
Assignee:
Nanya Technology Corporation, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/11 (2013.01); H01L 2224/1162 (2013.01); H01L 2224/1191 (2013.01); H01L 2224/11614 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13084 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13181 (2013.01); H01L 2224/13186 (2013.01); H01L 2224/13563 (2013.01); H01L 2224/13582 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0534 (2013.01); H01L 2924/05342 (2013.01); H01L 2924/05442 (2013.01);
Abstract
The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate, a plurality of metallic pillars, a plurality of metallic protrusions, a capping layer, and a passivation layer. The metallic pillars are disposed on the substrate. The metallic protrusions extend from an upper surface of the metallic pillars. The capping layer is disposed on the metallic protrusions. The passivation layer is disposed on sidewalls of the protrusions and the capping layer.