The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Sep. 18, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Jason A. Farmer, Hillsboro, OR (US);

Gopinath Trichy, Hillsboro, OR (US);

Justin S. Sandford, Tigard, OR (US);

Daniel B. Bergstrom, Lake Oswego, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 21/76229 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. Microelectronic devices including first and second fins that are laterally offset by a fin pitch to define a first field there between are also described. In embodiments the microelectronic devices include a conformal oxide layer and a conformal nitride layer on at least a portion of the first and second fins, where the conformal nitride layer is on at least a portion of the conformal oxide layer and a sacrificial oxide material is disposed within the first field.


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