The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Aug. 28, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Smic New Technology Research and Development (Shanghai) Corporation, Shanghai, CN;
Fei Zhou, Shanghai, CN;
Abstract
A method for fabricating a semiconductor structure includes providing a base substrate, including a substrate, a plurality of gate structures formed on the substrate, and a cap layer formed on the plurality of gate structures; removing the cap layer to form a trench on each gate structure; and forming a substitution layer in the trench. The dielectric constant of the substitution layer is smaller than the dielectric constant of the cap layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile