The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Sep. 27, 2018
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Tokiyoshi Matsuda, Kyoto, JP;
Takashi Shinohe, Kyoto, JP;
Shingo Yagyu, Kyoto, JP;
Takuto Igawa, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/267 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/778 (2006.01); H01L 29/737 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/0262 (2013.01); H01L 21/02483 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02628 (2013.01); H01L 29/04 (2013.01); H01L 29/24 (2013.01); H01L 29/7787 (2013.01); H01L 29/22 (2013.01); H01L 29/7371 (2013.01); H01L 29/778 (2013.01);
Abstract
In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.