The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Sep. 06, 2018
Applicant:
Nuflare Technology, Inc., Yokohama-shi, Kanagawa, JP;
Inventor:
Kiyotaka Miyano, Tokyo, JP;
Assignee:
NuFlare Technology, Inc., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/16 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/76 (2006.01); H01L 21/8258 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/0259 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02516 (2013.01); H01L 21/02529 (2013.01); H01L 21/76 (2013.01); H01L 21/76264 (2013.01); H01L 21/8258 (2013.01); H01L 27/088 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 21/02532 (2013.01); H01L 21/02609 (2013.01);
Abstract
A semiconductor device includes: a silicon substrate having a first plane with a first plane orientation; a silicon oxide layer provided on a first region of the silicon substrate; a first silicon layer provided on the silicon oxide layer, the first silicon layer having a second plane with a second plane orientation different from the first plane orientation; and a wide-bandgap compound semiconductor layer having a hexagonal crystal structure.
Miyano, Kiyotaka. (2020). Semiconductor device and method for manufacturing the same (U.S. Patent No. 10770481). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10770481
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile