The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Apr. 01, 2019
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Yao-An Chung, Hsin-chu, TW;
Yuan-Chieh Chiu, Hsinchu County, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/792 (2006.01); H01L 27/11568 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11568 (2013.01); H01L 29/40117 (2019.08); H01L 29/7926 (2013.01);
Abstract
A semiconductor structure for three-dimensional memory device and a manufacturing method thereof are provided. In the manufacturing method, clean plasma is used to clean the impurity doped regions, formed by slit etching, in the surface layer of the substrate to decrease the contact resistance between substrate and conductive plugs formed in the slits. The bottom part of the conductive plugs each has a reduced neck structure and an enlarged bottom structure.