The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Apr. 25, 2019
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Nicholas V. Licausi, Watervliet, NY (US);
Shao Beng Law, Watervliet, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01);
Abstract
A method of fabricating a semiconductor device structure comprising depositing a layer of material on a dielectric stack and patterning the layer of material to form a hard mask, depositing a metal layer covering the hard mask to form a metal hard mask, forming vias in the dielectric stack using the metal hard mask, removing the metal hard mask, and forming trenches in the dielectric stack using the hard mask, wherein the hard mask and the metal hard mask are used to define a line end structure separating the trenches.