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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10770306 B1

PDFFull Text
Date of Patent:
Sep. 08, 2020

Filed:

Jan. 04, 2019

Method of etching a cavity in a stack of layers

Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Pierre Bar, Grenoble, FR;

Francois Leverd, Saint Ismier, FR;

Delia Ristoiu, Saint Ismier, FR;

Assignee:

STMicroelectronics (Crolles 2) SAS, Crolles, FR;

Attorney:

Crowe & Dunlevy

Primary Examiner:

Nadine G Norton

Assistant Examiner:

Mahmoud Dahimene

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); G02B 6/36 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); G02B 6/3636 (2013.01); G02B 6/3652 (2013.01); G02B 6/3692 (2013.01); H01L 21/02507 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); G02B 6/42 (2013.01);
Abstract

A cavity is etched in a stack of layers which includes a first layer made of a first material and a second layer made of a second material. To etch the cavity, a first etch mask having a first opening is formed over the stack of layer. The stack of layers is then etched through the first opening to a depth located in the second layer. A second mask having a second opening, the dimensions of which are smaller, in top view, than the first opening, is formed over the stack of layer. The second opening is located, in top view, opposite the area etched through the first opening. The second layer is then etched through the second opening to reach the first layer. The etch method used is configured to etch the second material selectively over the first material.

Find Patent Forward Citations

Bar, Pierre. (2020). Method of etching a cavity in a stack of layers (U.S. Patent No. 10770306). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10770306

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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