The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Sep. 16, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Takashi Kuratomi, San Jose, CA (US);
Avgerinos V. Gelatos, Scotts Valley, CA (US);
I-Cheng Chen, San Jose, CA (US);
Faruk Gungor, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); C23C 16/04 (2006.01); C23C 16/14 (2006.01); C23C 16/452 (2006.01); H01J 37/00 (2006.01); H01L 21/3205 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/04 (2013.01); C23C 16/06 (2013.01); C23C 16/14 (2013.01); C23C 16/452 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/50 (2013.01); H01J 37/00 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 21/28518 (2013.01); H01L 21/67167 (2013.01);
Abstract
Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.