The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Nov. 05, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kenneth J. Eldredge, Boise, ID (US);

Frankie F. Roohparvar, Monte Sereno, CA (US);

Luca De Santis, Avezzano, IT;

Tommaso Vali, Sezze, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 15/00 (2006.01); G11C 15/04 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 15/00 (2013.01); G11C 15/046 (2013.01); G11C 16/0483 (2013.01);
Abstract

Methods of operating a memory device include comparing input data to data stored in strings of series-connected memory cells coupled to a data line, generating a respective resistance in series with each string of series-connected memory cells while comparing the plurality of digits of input data to the stored data, comparing a representation of a level of current in the data line to a reference, deeming the input data to match the stored data in response to the representation of the level of current in the data line being less than the reference, and deeming the input data to not match the stored data in response to the representation of the level of current in the data line being greater than the reference.


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