The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Apr. 23, 2019
Applicants:

Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, CN;

Alto Memory Technology Corporation, Hsinchu County, TW;

Inventors:

Fan-Yi Jien, Hsinchu County, TW;

Jui-Jen Wu, Hsinchu County, TW;

Junhua Zheng, Hsinchu County, TW;

Chengyu Xu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1096 (2013.01); G11C 7/1078 (2013.01);
Abstract

A memory device includes a memory array, write drivers and a controller. The memory array includes a plurality of memory units respectively arranged in a plurality of bit lines. The write drivers generate a plurality of write bit signals respectively inputted to the bit lines. The controller provides a voltage mode control signal and a current mode control signal. The controller is electrically coupled to the write drivers. Each of the write drivers generates a respective write bit signal of each of the write drivers according to the voltage mode control signal and the current mode control signal. When each of the memory units is in a set state, the controller outputs the voltage mode control signal and the current mode control signal to the write drivers. When each of the memory units is in a reset state, the controller outputs the voltage mode control signal to the write drivers.


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