The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
May. 15, 2018
International Business Machines Corporation, Armonk, NY (US);
Jing Sha, White Plains, FL (US);
Ekmini Anuja De Silva, Slingerlands, NY (US);
Nelson Felix, Slingerlands, NY (US);
Derren Dunn, Sandy Hook, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of co-optimizing lithographic and etching processes for semiconductor fabrication. The method includes determining a first set of locations for a first complementary laser annealing to be performed on. The first complementary laser annealing is performed at the first set of locations on at least a first semiconductor wafer of a plurality of semiconductor wafers. The first complementary laser annealing is performed before or after a first post-exposure baking process for the at least first semiconductor wafer. After an etching process has been performed on at least the first semiconductor wafer, a second set of locations is determined for a second complementary laser annealing to be performed on. The second complementary laser annealing is performed at the second set of locations on at least a second semiconductor wafer of the plurality of semiconductor wafers. The second complementary laser annealing is performed before or after a second post-exposure baking process.