The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Mar. 21, 2018
Futurewei Technologies, Inc., Plano, TX (US);
Dawei Zheng, Irvine, CA (US);
Ge Yi, San Ramon, CA (US);
Li Yang, San Jose, CA (US);
Xiao Shen, San Bruno, CA (US);
Futurewei Technologies, Inc., Plano, TX (US);
Abstract
A method for fabricating a photonic integrated circuit (PIC) comprises providing a silicon-on-insulator (SOI) wafer comprising an insulator layer disposed between a base semiconductor layer and a SOI layer, wherein the SOI layer comprises a waveguide, providing at least one slot within the SOI layer, wherein the at least one slot is positioned on the same or opposite sides of the waveguide, and wherein the at least one slot is positioned at a predetermined distance away from the waveguide, and removing a portion of the insulator layer to form an etched-out portion of the insulator layer, wherein the etched-out portion is positioned directly beneath the waveguide, and wherein a width of the etched-out portion is at least the width of the waveguide.