The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Jul. 08, 2016
Institute of Geology and Geophysics, Chinese Academy of Sciences, Beijing, CN;
Kevin Chau, Beijing, CN;
Man Wong, Hong Kong, CN;
Abstract
The present invention relates to a MEMS pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a MEMS pressure sensor die is provided. The pressure sensor die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.