The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Nov. 15, 2018
Applicant:

Soulbrain Co., Ltd., Seongnam-si, Gyeonggi-do, KR;

Inventors:

Kyung Il Park, Seongnam-si, KR;

Seok Joo Kim, Seongnam-si, KR;

Hyeong Ju Lee, Seongnam-si, KR;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/00 (2006.01); C09G 1/02 (2006.01); C09G 1/04 (2006.01); C09G 1/06 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C09G 1/00 (2013.01); C09G 1/04 (2013.01); C09G 1/06 (2013.01); H01L 21/304 (2013.01); H01L 21/32115 (2013.01); H01L 21/461 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01);
Abstract

A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof. The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices.


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