The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Dec. 13, 2018
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventor:
Mario Allegra, Monza, IT;
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/141 (2013.01); G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/122 (2013.01); H01L 45/1253 (2013.01);
Abstract
A memory cell can include a chalcogenide material configured in an annular shape or a chalcogenide material substantially circumscribing an interior conductive channel. Such memory cells can be included in memory structures having an interior conductive channel and a plurality of alternating dielectric layers and memory layers oriented along the interior conductive channel. Individual memory layers can include a chalcogenide material substantially circumscribing the interior conductive channel.