The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

May. 16, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Fabio Carta, Pleasantville, NY (US);

Chung H. Lam, Peekskill, NY (US);

Matthew J. BrightSky, Pound Ridge, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 27/24 (2006.01); H01L 21/20 (2006.01); H01L 45/00 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/2026 (2013.01); H01L 27/2409 (2013.01); H01L 27/2472 (2013.01); H01L 29/6609 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01); H01L 29/868 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01);
Abstract

A method is presented for integrating an electronic component in back end of the line (BEOL) processing. The method includes forming a first electrode over a semiconductor substrate, forming a first electrically conductive material over a portion of the first electrode, and forming a second electrically conductive material over the first electrically conductive material, where the first and second electrically conductive materials define a p-n junction. The method further includes depositing a second electrode between a set of spacers and in direct contact with the p-n-junction, depositing a phase change material over the p-n junction and in direct contact with the second electrode, and forming a third electrode over a portion of the phase change material.


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