The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Dec. 25, 2017
Hitachi Power Semiconductor Device, Ltd., Hitachi-shi, Ibaraki, JP;
Hitachi Power Semiconductor Device, Ltd., Hitachi-shi, JP;
Abstract
Provided is a semiconductor device in which, in a case where a metallic plate (a conductive member) is bonded by being sintered to a semiconductor chip having an IGBT gate structure, an excess stress is less likely to be generated in a gate wiring section of the semiconductor chip even when pressure is applied in a sinter bonding process, so that a characteristic failure is reduced. The semiconductor device according to the present invention is characterized by: being provided with a semiconductor chip having a gate structure represented by an IGBT; including first gate wiring and second gate wiring formed on the surface of the semiconductor chip; and including an emitter electrode disposed so as to cover the first gate wiring and a sintered layer disposed above the emitter electrode, wherein a multilayer structure formed by including at least the emitter electrode and the sintered layer on the surface of the semiconductor chip continuously exists over a range including an emitter electrode connecting contact and gate wiring regions.