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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10763340 B1

PDFFull Text
Expired
Date of Patent:
Sep. 01, 2020

Filed:

Sep. 12, 2018

Growing groups iii-v lateral nanowire channels

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sanghoon Lee, White Plains, NY (US);

Effendi Leobandung, Stormville, NY (US);

Renee Mo, Yorktown Heights, NY (US);

Brent A. Wacaser, Putnam Valley, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

L. Jeffrey Kelly

Primary Examiner:

Alexander G Ghyka

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01); B82Y 10/00 (2011.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/8258 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66522 (2013.01); B82Y 10/00 (2013.01); H01L 21/0242 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02433 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02538 (2013.01); H01L 21/02603 (2013.01); H01L 21/02639 (2013.01); H01L 21/02645 (2013.01); H01L 21/26546 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/30612 (2013.01); H01L 21/30617 (2013.01); H01L 21/7624 (2013.01); H01L 29/045 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/20 (2013.01); H01L 29/42384 (2013.01); H01L 29/42392 (2013.01); H01L 29/66469 (2013.01); H01L 29/775 (2013.01); H01L 29/7853 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H01L 21/3083 (2013.01); H01L 21/30608 (2013.01); H01L 21/8258 (2013.01);
Abstract

In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the <111> direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

Find Patent Forward Citations

Quick Actions:

Lee, Sanghoon. (2020). Growing groups iii-v lateral nanowire channels (U.S. Patent No. 10763340). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10763340

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