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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10763155 B1

PDFFull Text
Date of Patent:
Sep. 01, 2020

Filed:

Nov. 02, 2018

Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Gurtej S. Sandhu, Boise, ID (US);

Scott L. Light, Boise, ID (US);

John A. Smythe, Boise, ID (US);

Sony Varghese, Manchester-by-the-Sea, MA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Victor A Mandala

Assistant Examiner:

Colleen E Snow

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 29/06 (2006.01); G03F 7/075 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/023 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); G03F 7/0233 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/0757 (2013.01); G03F 7/20 (2013.01); G03F 7/30 (2013.01); H01L 21/0217 (2013.01); H01L 21/02118 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02189 (2013.01); H01L 21/02345 (2013.01); H01L 21/311 (2013.01); H01L 21/31053 (2013.01); H01L 21/31058 (2013.01); H01L 21/76229 (2013.01); H01L 29/0649 (2013.01);
Abstract

Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.

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