The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Feb. 09, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Nai-Han Cheng, Hsinchu County, TW;
Chi-Ming Yang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/305 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3053 (2013.01); H01J 37/3056 (2013.01); H01J 37/317 (2013.01); H01J 37/3172 (2013.01); H01J 37/32412 (2013.01);
Abstract
In some embodiments of the present disclosure, a method of treating an atom on a substrate includes an operation of ionizing an etchant and the ionized etchant is a positively charged. The method includes an operation of attaching the ionized etchant on the atom. The method also includes an operation of bonding the atom with the etchant to from a compound. The method further includes sputtering the substrate with a charged particle and an operation of applying a bias on the water.