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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10763107 B1

PDFFull Text
Date of Patent:
Sep. 01, 2020

Filed:

Jan. 10, 2020

Methods of encapsulation

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Bart J. van Schravendijk, Palo Alto, CA (US);

Akhil Singhal, Portland, OR (US);

Joseph Hung-chi Wei, Portland, OR (US);

Bhadri N. Varadarajan, Beaverton, OR (US);

Kevin M. McLaughlin, Sherwood, OR (US);

Casey Holder, Oakland, CA (US);

Ananda K. Banerji, West Linn, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:

Weaver Austin Villeneuve & Sampson LLP

Primary Examiner:

Robert G Bachner

Assistant Examiner:

Molly K Reida

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 43/12 (2006.01); C23C 16/56 (2006.01); C23C 16/34 (2006.01); H01L 23/29 (2006.01); C23C 16/515 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01J 37/32 (2006.01); C23C 16/50 (2006.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/50 (2013.01); C23C 16/515 (2013.01); C23C 16/56 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32155 (2013.01); H01J 37/32165 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02175 (2013.01); H01L 21/02211 (2013.01); H01L 21/02348 (2013.01); H01L 21/56 (2013.01); H01L 23/291 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01);
Abstract

Methods and apparatuses suitable for encapsulation layers for memory devices at temperatures less than about 300° C. are provided herein. Methods involve introducing a reactive species by pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

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