The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Jun. 15, 2017
Tokyo Electron Limited, Tokyo, JP;
Kenji Ouchi, Nirasaki, JP;
Masato Morishima, Tokyo, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a grooveformed on the main surfaceof the wafer W. The method MT includes: step Sof accommodating the wafer W in a processing chamberof a plasma processing apparatus; step Sof starting supplying a first gas into the processing chamber; step Sof starting supplying plasma generation high-frequency power into the processing chamber; and step Sof starting intermittent supplying a second gas into the processing chamberand starting supplying a third gas into the processing chambertogether, the first gas is a nitrogen-containing gas, the second gas is a gas that does not contain halogen, and the third gas is a gas that contains halogen.