The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Oct. 03, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Li-Min Chen, Zhubei, TW;

Kuo Bin Huang, Jhubei, TW;

Neng-Jye Yang, Hsinchu, TW;

Chia-Wei Wu, Toufen Township, TW;

Jian-Jou Lian, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/075 (2006.01); G03F 7/00 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01); G03F 7/42 (2006.01); G03F 1/80 (2012.01); H01L 21/02 (2006.01); G03F 7/20 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); G03F 1/80 (2013.01); G03F 7/0002 (2013.01); G03F 7/0757 (2013.01); G03F 7/094 (2013.01); G03F 7/16 (2013.01); G03F 7/2002 (2013.01); G03F 7/425 (2013.01); H01L 21/0274 (2013.01); H01L 21/02123 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/768 (2013.01);
Abstract

A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.


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