The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Oct. 17, 2017
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Shuichi Miyao, Niigata, JP;
Shigeyoshi Netsu, Niigata, JP;
Naruhiro Hoshino, Niigata, JP;
Tetsuro Okada, Niigata, JP;
Assignee:
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); C30B 13/34 (2006.01); C01B 33/035 (2006.01);
U.S. Cl.
CPC ...
C30B 13/34 (2013.01); C01B 33/035 (2013.01); C30B 29/06 (2013.01);
Abstract
A polycrystalline silicon ingot having a value of T−T, ΔT, of 50° C. or less, wherein Tand Tare the onset temperature and the completion temperature of melting, respectively, when the temperature is increased at a rate of 60° C./minute or less in the temperature range of 1400° C. or more is used as the production raw material for single crystal silicon. The present invention provides a polycrystalline silicon ingot or polycrystalline silicon rod suitable for stably producing single crystal silicon.