The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Mar. 04, 2019
Applicant:

Chung Yuan Christian University, Taoyuan, TW;

Inventors:

Cheng-An Lin, Taoyuan, TW;

Yeeu-Chang Lee, Taoyuan, TW;

Cheng-Yi Huang, Taoyuan, TW;

Chi-An Chen, Taoyuan, TW;

Yi-Tang Sun, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01); H01L 33/32 (2010.01); C09K 11/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/504 (2013.01); C09K 11/025 (2013.01); H01L 33/32 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0066 (2013.01); Y10S 977/731 (2013.01); Y10S 977/81 (2013.01); Y10S 977/83 (2013.01);
Abstract

Disclosed herein are a light-emitting diode (LED) package structure and a method producing the same. The LED package structure includes a substrate; and a light-emitting unit disposed on the substrate. The light-emitting unit comprises a gallium nitride-based semiconductor, and a polymeric layer encapsulating the gallium nitride-based semiconductor. Also disclosed herein is a method of producing the LED package structure. The method comprises: providing a substrate; electrically connecting a gallium nitride-based semiconductor onto the substrate; overlaying the gallium nitride-based semiconductor with a slurry comprising a resin and a plurality of composite fluorescent gold nanocluster; and curing the slurry overlaid on the gallium nitride-based semiconductor to form a solidified polymeric layer.


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