The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Dec. 14, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Keum Seok Park, Seongnam-si, KR;
Jungho Yoo, Seongnam-si, KR;
Jinyeong Joe, Suwon-si, KR;
Bonyoung Koo, Suwon-si, KR;
Dongsuk Shin, Yongin-si, KR;
Hongsik Yoon, Seongnam-si, KR;
Byeongchan Lee, Yongin-si, KR;
Abstract
A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.