The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Jul. 26, 2011
Applicants:
Yoshiomi Hiroi, Funabashi, JP;
Shinichi Maeda, Funabashi, JP;
Inventors:
Yoshiomi Hiroi, Funabashi, JP;
Shinichi Maeda, Funabashi, JP;
Assignee:
NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); C04B 35/01 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); C04B 35/626 (2006.01); C04B 35/453 (2006.01);
U.S. Cl.
CPC ...
H01L 29/247 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/62625 (2013.01); C04B 35/62675 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02628 (2013.01); H01L 29/78693 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01);
Abstract
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.