The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Jan. 29, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi-Cheng Chen, Tainan, TW;

Wei-Li Huang, Pingtung, TW;

Chien-Chih Kuo, Tainan, TW;

Hon-Lin Huang, Hsinchu, TW;

Chin-Yu Ku, Hsinchu, TW;

Chen-Shien Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01F 41/04 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01F 41/046 (2013.01); H01L 21/76823 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/53204 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04073 (2013.01); H01L 2224/05 (2013.01);
Abstract

A structure and a formation method of a semiconductor device are provided. The method includes forming an adhesive layer over a semiconductor substrate and forming a magnetic element over the adhesive layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes partially removing the adhesive layer such that an edge of the adhesive layer is laterally disposed between an edge of the magnetic element and an edge of the isolation element. In addition, the method includes forming a conductive line over the isolation element.


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