The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Mar. 31, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Zhibiao Zhou, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/82 (2006.01); H01L 23/552 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 23/66 (2006.01); H01L 21/822 (2006.01); H01L 27/02 (2006.01); H01L 21/84 (2006.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/8221 (2013.01); H01L 21/84 (2013.01); H01L 23/66 (2013.01); H01L 27/0292 (2013.01); H01L 27/0688 (2013.01); H01L 27/1203 (2013.01); H01L 27/14818 (2013.01);
Abstract
A semiconductor structure is provided, the semiconductor structure includes a front oxide layer on a backside oxide layer, a front electronic component in the front oxide layer, a backside electronic component in the backside oxide layer, and a shield structure disposed between the front oxide layer and the backside oxide layer, the shield structure includes a patterned buried metal layer, two front contact structures disposed on a front surface of the patterned buried metal layer, and two back contact structures disposed on a backside of the patterned buried metal layer.